- 您现在的位置：买卖IC网 > Sheet目录405 > DMN2104L-7 (Diodes Inc)MOSFET N-CH 20V 4.3A SOT-23
DMN2104L
Package Outline Dimensions
A
SOT-23
Dim Min Max Typ
A
B
0.37 0.51 0.40
1.20 1.40 1.30
H
B C
C
D
F
G
H
2.30 2.50 2.40
0.89 1.03 0.915
0.45 0.60 0.535
1.78 2.05 1.83
2.80 3.00 2.90
K
D
K1
M
J
K
K1
0.013 0.10 0.05
0.903 1.10 1.00
- - 0.400
J
F
G
L
L
M
0.45 0.61 0.55
0.085 0.18 0.11
α
0° 8° -
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
2.9
Z
X
E
C
X
Y
C
E
0.8
0.9
2.0
1.35
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2104L
Document number: DS31560 Rev. 1 - 2
4 of 4
www.diodes.com
October 2008
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMN2112SN-7
MOSFET N-CH 20V 1.2A SC59-3
DMN2114SN-7
MOSFET N-CH 20V 1.2A SC59-3
DMN2170U-7
MOSFET N-CH 20V 2.3A SOT23-3
DMN21D2UFB-7B
MOSFET N CH 20V X1-DFN1006-3
DMN2215UDM-7
MOSFET N-CH 20V 2A SOT-26
DMN2230U-7
MOSFET N-CH 20V 2A SOT23-3
DMN2300U-7
MOSFET N-CH 20V 1.24A SOT23
DMN2300UFB4-7B
MOSF N CH 20V 1.3A DFN1006H4-3
相关代理商/技术参数
DMN2112SN
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2112SN_0711
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2112SN-7
功能描述:MOSFET 20V 1.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2114SN
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2114SN_0709
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2114SN-7
功能描述:MOSFET 20V 1.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2170U
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2170U-7
功能描述:MOSFET 600mW 20Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube